Wybrane publikacje z zakresu ostanich 5 lat:

• M. Stępniak, M. M. Wośko, A. Stafiniak, J. Prażmowska-Czajka, R. Paszkiewicz, Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique. Materials Science in Semiconductor Processing. 2023, vol. 160, art. 107394, pp. 1-6.
• W. Kijaszek, A. Wiatrowski, M. M. Mazur, D. Wojcieszak, R. Paszkiewicz, J. Jr. Kovăč, Study on properties of diamond-like carbon films deposited by RF ICP PECVD method for micro- and optoelectronic applications. Materials Science and Engineering. B, Advanced Functional Solid-State Materials. 2023, vol. 296, art. 116691, pp. 1-9.
• M. Stępniak, S. Owczarek*, A. Szyszka, M. M. Wośko, R. Paszkiewicz, Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks. Applied Surface Science. 2023, vol. 640, art. 158325, pp. 1-8
• M. Mikulicz, M. Rygała, T. Smołka, M. Janczak*, M. Badura, A. Łozińska, A. Wolf*, M. Emmerling*, B. Ściana, S. Höfling*, T. Czyszanowski*, G. Sęk, M. Motyka, Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings. Optics Express. 2023, vol. 31, no. 16, pp. 26898-26909.
• L. Stuchlíková*, B. Ściana, A. Kosa*, M. Matuš*, P. Benko*, J. Marek*, M. Donoval*, W. Dawidowski, D. Radziewicz, M. Weis*, Evaluation of effective mass in InGaAsN/GaAs quantum wells using transient spectroscopy. Materials, 2023, vol. 15, no. 21, art. 7621, pp. 1-8.
• A. Zawadzka, R. Paszkiewicz, Limitations of optical lithography on non-planar surfaces. Materials Science in Semiconductor Processing. 2022, vol. 143, art. 106548, pp. 1-6
• A. Szyszka, M. M. Wośko, A. Stafiniak, J. Prażmowska, R. Paszkiewicz, Scanning probe microscopy nanoscale electrical characterization of AlGaN/ GaN grown on structured GaN templates. Solid-State Electronics. 2022, vol. 193, art. 108288, pp. 1-6
• A. Stafiniak, J. Prażmowska-Czajka, J. J. Kutrowska-Girzycka, R. Korbutowicz, Ł. Pawlaczyk, J. N. Jadczak, J. Serafińczuk, R. Paszkiewicz, Thermal synthesis of Ga2O3/SnO2 core-shell nanowires and their structural characterization. Materials Science and Engineering. B, Advanced Functional Solid-State Materials. 2022, vol. 282, art. 115743, pp. 1-6
• B. Ściana, W. Dawidowski, D. Radziewicz, J. N. Jadczak, María Cruz. López-Escalante*, V. M. González de la Cruz*, M. Gabás*, Influence of As-N interstitial complexes on strain generated in GaAsN epilayers grown by AP-MOVPE. Energies, 2022, vol. 15, no. 9, art. 3036, pp. 1-17.
• A. Szyszka, M. Wośko, R. Paszkiewicz, Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures. Applied Surface Science. 2021, vol. 538, art. 148189, pp. 1-12
• P. Pokryszka, M. M. Wośko, W. Kijaszek, R. Paszkiewicz, High performance optical shutter design with scalable aperture. Bulletin of the Polish Academy of Sciences. Technical Sciences. 2021, vol. 69, no. 5, art. e138236, pp. 1-6
• M. Glinkowski, B. Paszkiewicz, R. Paszkiewicz, Influence of high electric field on operation of AlGaN/AlN/GaN high electron mobility transistor. Acta Physica Polonica A. 2021, vol. 140, no. 2, pp. 192-196
• M. Wośko, B. Paszkiewicz, R. Paszkiewicz, AlGaN/GaN heterostructures electrical performance by altering GaN/sapphire buffers growth pressure and low-temperature GaN interlayers application. Crystal Research and Technology. 2021, vol. 56,no. 12, art. 2100090 pp. 1-5
• W. Dawidowski, B. Ściana, I. Zborowska-Lindert, M. Mikolášek*, J. Kováč*, M.k Tłaczała, Tunnel junction limited performance of InGaAsN/GaAs tandem solar cell. Solar Energy, 2021, vol. 214, s. 632-641.
• W. Dawidowski, B. Ściana, K. Bielak, M. Mikolášek*, J. Drobný*, J. Serafińczuk, I. Lombardero*, D. Radziewicz, W. Kijaszek, A. Kósa*, M. Florovič*, J. Kováč*, C. Algora*, L. Stuchlíková*, Analysis of current transport mechanism in AP-MOVPE grown GaAsN p-i-n solar cell. Energies. 2021, vol. 14, no. 15, art. 4651, pp. 1-18.
• M. M. Wośko, B. Paszkiewicz, A.Stafiniak, J. Prażmowska-Czajka, A. Vincze*, K. Indykiewicz, M. Stępniak, B. Kaczmarczyk, R. Paszkiewicz, Metalorganic vapour-phase epitaxy of AlGaN/GaN heterostructures on chlorine plasma etched GaN templates without buried conductive layer. Materials Science in Semiconductor Processing. 2020, vol. 107, art. 104816, pp. 1-6
• M. Glinkowski, B. Paszkiewicz, M.M. Wośko, R. Paszkiewicz, The origin and influence of compensatory current in AlGaN/GaN type high electron mobility transistor heterostructures with two conducting channels on the Hall measurements. Physica Status Solidi. A, Applications and Materials Science. 2020, vol. 217, no 9, art. 1900661, pp. 1-6
• M. Stępniak, M. M. Wośko, J. Prażmowska-Czajka, A.Stafiniak, D. Przybylski, R. Paszkiewicz, Growth uniformity in selective area epitaxy of AlGaN/GaN heterostructures for the application in semiconductor devices. Electronics. 2020, vol. 9, no. 12, art. 2129, s. 1-15
• S. Owczarzak, A. Stafiniak, R. Paszkiewicz, Two-stage reactive ion etching of AlGaN/GaN high electron mobility transistor type heterostructures. Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics. 2019, vol. 37, no. 1, art. 011024, pp. 1-6
• M. M. Wośko, T. Szymański, B. Paszkiewicz, P. Pokryszka, R. Paszkiewicz, MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications. Journal of Materials Science. Materials in Electronics. 2019, vol. 30, no. 4, pp. 4111–4116
• A. Szyszka, M. M. Wośko, B. Paszkiewicz, R. Paszkiewicz, Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy. Materials Science in Semiconductor Processing. 2019, vol. 94, pp. 57-63
• B. Ściana, D. Radziewicz, W. Dawidowski, K. Bielak, A. Szyszka, J. K. Kopaczek, Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP‑MOVPE correlated with their structural and optical properties, Journal of Materials Science. Materials in Electronics. 2019, vol. 30, no. 17, pp. 16216-16225.
• M. Kurka, M. Badura, M. Ł. Dyksik, K. Ryczko, J. K. Kopaczek, J. Misiewicz, B. Ściana, M. Tłaczała, I. Sankowska*, K. Pierściński*, M. Motyka, Optical spectroscopy studies of atom intermixing in the core versus growth temperature of the claddings in MOCVD-grown quantum cascade lasers. Journal of Physics Communications. 2019, vol. 3, no. 12, art. 125007, pp. 1-8.
• A. Stafiniak, J. Prażmowska, W. Macherzyński, R. Paszkiewicz, Nanostructuring of Si substrates by a metal-assisted chemical etching and dewetting proces. RSC Advances. 2018, vol. 8, no. 54, pp. 31224-31230
• M. Cruz López-Escalante*, B. Ściana, W. Dawidowski, K.Bielak, M.Gabás*, Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques. Applied Surface Science. 2018, vol. 433, pp. 1-9.
• A. Kosa*, L. Stuchlíková*, L. Harmatha*, J. Kováč*, B. Ściana, W. Dawidowski, M. Tłaczała, DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions. Materials Science in Semiconductor Processing. 2018, vol. 74, pp. 313-318.