Wybrane publikacje z zakresu ostanich lat:

• M. Stępniak, M. Wośko, W. Kijaszek, J. Prażmowska-Czajka, A. Stafiniak, R. Paszkiewicz, Mask interference effect in GaN SA-MOVPE: Predicting the growth of isolated structures. Materials Science and Engineering. B, 2026, vol. 323, Pt. A, art. 118730, s. 1-9.
• P. Pokryszka, W. Kijaszek, S. Patela, A. Stafiniak, M. Wośko, R. Paszkiewicz. In-situ characterization of GaN material using reflectance spectroscopy. Metrology and Measurement Systems. 2025, vol. 32, nr 1, s. 1-12.
  A. Szyszka, W. Dawidowski, D. Radziewicz, B. Ściana. Photo-scanning capacitance microscopy and spectroscopy study of epitaxial GaAsN layers and GaAsN p-i-n solar cell structures. Nanomaterials. 2025, vol. 15, nr 14, art. 1066, s. 1-15.
• S. Baluta, K. Duerme, W. M. Perera, A. Szyszka, P. Jamróz, J. Cabaj. Optimizing gold electrode surface treatments for enhanced dopamine detection: a comparative study. Colloids and Surfaces. A, Physicochemical and Engineering Aspects. 2025, vol. 718, art. 136873, s. 1-12.
• Z. Starowicz, W. Dawidowski, J. Ostapko, M. Wlazło, G. Putynkowski, M. Szczerba, J. Woźny, M. Wełna, K. Gawlińska-Nęcek, P. Panek. Effects of thickness and deposition temperature of ALD ZnO thin films on the improvement of electrical properties through dedicated low temperature annealing post-processing. Materials Science and Engineering. B, Advanced Functional Solid-State Materials. 2025, vol. 321, art. 118468, s. 1-13.
• C. Hemendra, E. Dobročka, P. Nádaždy, M. Tapajna, K. Hušeková, I. Cora, A. Rosova, M. Mikolášek, F. Egyenes, J. Keshtkar, F. Hrubišák, M. Sobota, P. Šiffalovič, D. Gregušová, O. Pohorelec, M. Wośko, R. Paszkiewicz, F. Gucmann. Rotational domains and origin of improved crystal quality in heteroepitaxial (201) ϐ-Ga2O3 films grown on vicinal substrates by MOVPE. Journal of Alloys and Compounds. 2025, vol. 1044, art. 184481, s. 1-11.
• N. Piegat, W. Kijaszek, S. Patela, A. Wymysłowski. Influence of ellipsometric data type on SiO2 thickness prediction accuracy for different machine learning algorithms. Przegląd Elektrotechniczny. 2025, R. 101, nr 5, s. 89-93.
• A. Zielińska, J. Prażmowska-Czajka, M. Dyksik, J. Eroms, D. Weiss, R. Paszkiewicz, M. Ciorga. Study of gold and bismuth electrical contacts to a MoS2 monolayer. Solid State Communications. 2025, vol. 367, art. 115824, s. 1-5.
• P. Pokryszka, Y. Xu, W. Chang, K. Krzempek. Stabilized 30 µJ dissipative soliton resonance laser source at 1064 nm. Scientific Reports. 2024, vol. 14, art. 28251, s. 1-13.
• M. Wośko, B. Paszkiewicz, B. Paszkiewicz, G. Ilgiewicz, I. Sankowska, R. Paszkiewicz. Metalorganic vapor phase epitaxy of GaN-based structures grown on etched and non-etched Si(115) substrates for piezoelectric component separated devices. Bulletin of the Polish Academy of Sciences. Technical Sciences. 2025, vol. 73, nr 5, art. e154728, s. 1-6.
• A. Obstarczyk, E. Mańkowska, W. Weichbrodt, P. Kapuścik, W. Kijaszek, M. Mazur. Analysis of the impact of post-process modifications on the properties of TiO2 thin films with high-temperature stable anatase phase deposited by the electron beam evaporation method. Opto-Electronics Review. 2024, vol. 32, nr 4, art. e151991, s. 1-9.
• M. Mikulicz, T. Smołka, M. Rygała, M. Badura, W. Kijaszek, A. Łozińska, M. Kamp, M. Motyka. Temperature dependence of refractive indices of InP, GaAs, AlAs, and In0.53Ga0.47As in the midinfrared spectral range determined by combined ellipsometry and Fourier-transform spectroscopy. Physical Review Applied. 2024, vol. 21, nr 4, art. 044001, s. 1-11.
• M. Jaworski, A. Chudzyńska*, P. Mrowiński, J. Prażmowska-Czajka, W. Kijaszek, J. Große, S. Rodt, S. Reitzenstein, Grzegorz Sęk. Xenon-plasma focused ion beam processing of photonic microstructures with GaAs-based quantum dots. Optical Materials Express. 2023, vol. 13, nr 10, s. 2845-2856.
• P. Bojęś, P. Jaworski, P. Pokryszka, W. Belardi, V. Spagnolo, K. Krzempek, Dual‑band light‑induced thermoelastic spectroscopy utilizing an antiresonant hollow‑core fiber‑based gas absorption cell, Applied Physics B-Lasers and Optics. 2023, vol. 129, art. 177, s. 1-11.
• M. Stępniak, Mateusz M. Wośko, Regina Paszkiewicz. The influence of GaN growth temperature on parasitic masking in SA-MOVPE using PECVD SiO2 mask, Materials Science in Semiconductor Processing. 2023, vol. 168, art. 107857, s. 1-5.
• J. Duan, M. Liedke, W. Dawidowski, R. Li, M. Butterling, E. Hirschmann, A. Wagner, M. Wang, L. B. Young, Y.-H. G. Lin, M. Hong, M. Helm, S. Zhou, S. Prucnal, Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics. Journal of Applied Physics. 2023, vol. 134, nr 9, art. 095102, s. 1-14.
• M. Stępniak, M. M. Wośko, A. Stafiniak, J. Prażmowska-Czajka, R. Paszkiewicz, Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique. Materials Science in Semiconductor Processing. 2023, vol. 160, art. 107394, pp. 1-6.
• W. Kijaszek, A. Wiatrowski, M. M. Mazur, D. Wojcieszak, R. Paszkiewicz, J. Jr. Kovăč, Study on properties of diamond-like carbon films deposited by RF ICP PECVD method for micro- and optoelectronic applications. Materials Science and Engineering. B, Advanced Functional Solid-State Materials. 2023, vol. 296, art. 116691, pp. 1-9.
• M. Stępniak, S. Owczarek*, A. Szyszka, M. M. Wośko, R. Paszkiewicz, Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks. Applied Surface Science. 2023, vol. 640, art. 158325, pp. 1-8
• M. Mikulicz, M. Rygała, T. Smołka, M. Janczak*, M. Badura, A. Łozińska, A. Wolf*, M. Emmerling*, B. Ściana, S. Höfling*, T. Czyszanowski*, G. Sęk, M. Motyka, Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings. Optics Express. 2023, vol. 31, no. 16, pp. 26898-26909.
• L. Stuchlíková, B. Ściana, A. Kosa, M. Matuš, P. Benko, J. Marek, M. Donoval, W. Dawidowski, D. Radziewicz, M. Weis*=, Evaluation of effective mass in InGaAsN/GaAs quantum wells using transient spectroscopy. Materials, 2023, vol. 15, no. 21, art. 7621, pp. 1-8.
• A. Zawadzka, R. Paszkiewicz, Limitations of optical lithography on non-planar surfaces. Materials Science in Semiconductor Processing. 2022, vol. 143, art. 106548, pp. 1-6
• A. Szyszka, M. M. Wośko, A. Stafiniak, J. Prażmowska, R. Paszkiewicz, Scanning probe microscopy nanoscale electrical characterization of AlGaN/ GaN grown on structured GaN templates. Solid-State Electronics. 2022, vol. 193, art. 108288, pp. 1-6
• A. Stafiniak, J. Prażmowska-Czajka, J. J. Kutrowska-Girzycka, R. Korbutowicz, Ł. Pawlaczyk, J. N. Jadczak, J. Serafińczuk, R. Paszkiewicz, Thermal synthesis of Ga2O3/SnO2 core-shell nanowires and their structural characterization. Materials Science and Engineering. B, Advanced Functional Solid-State Materials. 2022, vol. 282, art. 115743, pp. 1-6
• B. Ściana, W. Dawidowski, D. Radziewicz, J. N. Jadczak, María Cruz. López-Escalante*, V. M. González de la Cruz*, M. Gabás*, Influence of As-N interstitial complexes on strain generated in GaAsN epilayers grown by AP-MOVPE. Energies, 2022, vol. 15, no. 9, art. 3036, pp. 1-17.
• A. Szyszka, M. Wośko, R. Paszkiewicz, Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures. Applied Surface Science. 2021, vol. 538, art. 148189, pp. 1-12
• P. Pokryszka, M. M. Wośko, W. Kijaszek, R. Paszkiewicz, High performance optical shutter design with scalable aperture. Bulletin of the Polish Academy of Sciences. Technical Sciences. 2021, vol. 69, no. 5, art. e138236, pp. 1-6
• M. Glinkowski, B. Paszkiewicz, R. Paszkiewicz, Influence of high electric field on operation of AlGaN/AlN/GaN high electron mobility transistor. Acta Physica Polonica A. 2021, vol. 140, no. 2, pp. 192-196
• M. Wośko, B. Paszkiewicz, R. Paszkiewicz, AlGaN/GaN heterostructures electrical performance by altering GaN/sapphire buffers growth pressure and low-temperature GaN interlayers application. Crystal Research and Technology. 2021, vol. 56,no. 12, art. 2100090 pp. 1-5
• W. Dawidowski, B. Ściana, I. Zborowska-Lindert, M. Mikolášek*, J. Kováč*, M.k Tłaczała, Tunnel junction limited performance of InGaAsN/GaAs tandem solar cell. Solar Energy, 2021, vol. 214, s. 632-641.
• W. Dawidowski, B. Ściana, K. Bielak, M. Mikolášek*, J. Drobný*, J. Serafińczuk, I. Lombardero*, D. Radziewicz, W. Kijaszek, A. Kósa*, M. Florovič*, J. Kováč*, C. Algora*, L. Stuchlíková*, Analysis of current transport mechanism in AP-MOVPE grown GaAsN p-i-n solar cell. Energies. 2021, vol. 14, no. 15, art. 4651, pp. 1-18.
• M. M. Wośko, B. Paszkiewicz, A.Stafiniak, J. Prażmowska-Czajka, A. Vincze*, K. Indykiewicz, M. Stępniak, B. Kaczmarczyk, R. Paszkiewicz, Metalorganic vapour-phase epitaxy of AlGaN/GaN heterostructures on chlorine plasma etched GaN templates without buried conductive layer. Materials Science in Semiconductor Processing. 2020, vol. 107, art. 104816, pp. 1-6
• M. Glinkowski, B. Paszkiewicz, M.M. Wośko, R. Paszkiewicz, The origin and influence of compensatory current in AlGaN/GaN type high electron mobility transistor heterostructures with two conducting channels on the Hall measurements. Physica Status Solidi. A, Applications and Materials Science. 2020, vol. 217, no 9, art. 1900661, pp. 1-6
• M. Stępniak, M. M. Wośko, J. Prażmowska-Czajka, A.Stafiniak, D. Przybylski, R. Paszkiewicz, Growth uniformity in selective area epitaxy of AlGaN/GaN heterostructures for the application in semiconductor devices. Electronics. 2020, vol. 9, no. 12, art. 2129, s. 1-15
• S. Owczarzak, A. Stafiniak, R. Paszkiewicz, Two-stage reactive ion etching of AlGaN/GaN high electron mobility transistor type heterostructures. Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics. 2019, vol. 37, no. 1, art. 011024, pp. 1-6
• M. M. Wośko, T. Szymański, B. Paszkiewicz, P. Pokryszka, R. Paszkiewicz, MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications. Journal of Materials Science. Materials in Electronics. 2019, vol. 30, no. 4, pp. 4111–4116
• A. Szyszka, M. M. Wośko, B. Paszkiewicz, R. Paszkiewicz, Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy. Materials Science in Semiconductor Processing. 2019, vol. 94, pp. 57-63
• B. Ściana, D. Radziewicz, W. Dawidowski, K. Bielak, A. Szyszka, J. K. Kopaczek, Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP‑MOVPE correlated with their structural and optical properties, Journal of Materials Science. Materials in Electronics. 2019, vol. 30, no. 17, pp. 16216-16225.
• M. Kurka, M. Badura, M. Ł. Dyksik, K. Ryczko, J. K. Kopaczek, J. Misiewicz, B. Ściana, M. Tłaczała, I. Sankowska*, K. Pierściński*, M. Motyka, Optical spectroscopy studies of atom intermixing in the core versus growth temperature of the claddings in MOCVD-grown quantum cascade lasers. Journal of Physics Communications. 2019, vol. 3, no. 12, art. 125007, pp. 1-8.
• A. Stafiniak, J. Prażmowska, W. Macherzyński, R. Paszkiewicz, Nanostructuring of Si substrates by a metal-assisted chemical etching and dewetting proces. RSC Advances. 2018, vol. 8, no. 54, pp. 31224-31230
• M. Cruz López-Escalante*, B. Ściana, W. Dawidowski, K.Bielak, M.Gabás*, Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques. Applied Surface Science. 2018, vol. 433, pp. 1-9.
• A. Kosa*, L. Stuchlíková*, L. Harmatha*, J. Kováč*, B. Ściana, W. Dawidowski, M. Tłaczała, DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions. Materials Science in Semiconductor Processing. 2018, vol. 74, pp. 313-318.