AIIIN/2D materials:

• Project NCRD: Lider 027/533/L-13/NCBR/2014, “The technology of AlGaN/GaN HEMT transistor structures grown on the silicon substrates”, 01.2015-06.2018
• Project NSC OPUS, DEC-2015/19/B/ST7/02494 , ”The influence of piezotronics effects on the performance of AIIIN electronics devices”, 07.2016-01.2020
• Project NCRD TECMASTRATEG, No.1/346922/4/NCBR/2017, ”Semiconductor materials technology for high power and high frequency electronics”, 12.2017-06.2021
• Project NSC OPUS, UMO-2022/45/B/ST5/04292, Hybrid magnetic/non-magnetic van der Waals heterostructures with transition metal dichalcogenides: novel materials for spintronics, valleytronics and opto-spintronics, 07.2023-06.2027
• Project MES: SPUB 36/564935/SPUB/SP/2023, Epitaxial system with AIXTRON reactor, homogenisation head, equipment and infrastructure, 07.2023-07.2026

AIIIBV-N:

• Project NCRD TECMASTRATEG: 1/347510/15/NCBR/2018, ” Development of structure technology for single-mode cascade lasers for applications in optical gas detection systems”, 03.2018-02.2022
• Project NSC OPUS-17 No. 2019/33/B/ST7/02591, „Subwavelength MHCG gratings as active mirrors for a new class of quantum lasers”, 02.2020-07.2023
• BPN/BSK/2021/1/00035/U/00001, Key enabling technologies for advanced electronic and optoelectronic applications, Bilateral exchange of researchers (NAWA) between the Republic of Poland and the Slovak Republic 01.2022-10.2023