The Department includes Laboratories:

• Laboratory of Device Processes Technology
• Laboratory of Photonic Structures Epitaxy
• Laboratory of Wideband Structures Epitaxy and Characterizatio

Infrastructure of the Department

All the necessary technological and measurement equipment and simulation software are at the direct disposal of the research team:

The technological equipment is located in two technological halls (clean rooms) with an area of 200 sq m and an area of 300 sq m. Each hall has separate rooms for nanolithography, with a cleanliness class of 100. The technological halls have full infrastructure (central installations for vacuum, nitrogen, hydrogen and deionized water) and form a complete technological line, which includes equipment necessary to carry out various tasks of the project, among others:

• two systems for the epitaxy of ScN/AlGaN/GaN and (AlGaIn)(AsPN) heterostructures using the MOVPE technique (AIXTRON CCS 3x2"),
• system for the fabrication of chrome and emulsion masks for photolithography, size 6x6 cm, characteristic dimensions of structures > 3 µm
• system for epitaxy of thick GaN and nano wire GaN by HVPE technique,
• UV photolithography system (Karl Suss MA56) on substrates with dimensions from 8 mm2 to 3", characteristic dimension > 0.6 µm, DUV (Karl Suss MJB4) characteristic dimension > 0.4 µm,
• UHV system for metallic multilayers deposition (ohmic and Schottky contacts for nitrides and ScN/AlGaN/GaN heterostructures) using an electron gun and magnetron sputtering - 2 vacuum devices,
• fabrication of dielectric layers (Si3N4, SiO2, SiON, AlN) by magnetron sputtering and PECVD technique (OXFORD's PlasmaLab 80+) and layers by "spin-on" technique (polyimide, SU8),
• OXFORD RIE PlasmaLab 80+ system for reactive ion etching of nitrides in Cl2 and BCl3 plasma
• OXFORD ICP RIE PlasmaLab 100 system for deposition and etching of DLC and nanodiamond
• two system for RTP of contacts and high-temperature heating processes by EFCO (250-12500C)

Measurement equipment:

• AFM/STM microscope (Bruker MultiMode system with application modules (SSRR, SPM, SCM, STM, TM) equipped with a heated stage, atmospheric chamber, cell for measurements in liquids and an attachment for point electrical measurements)
• SEM Hitachi Su6600 with EBIC and EDS modules
• setup for HEMT structures RF measurements (N5230A network analyzer for the 300 kHz-20 GHz range, Agilent Tech., Inc., with a digital oscilloscope from Agiletnt Tech, Inc. (up to 3 GHz), equipped with a set of probes enabling measurements "on wafer” up to 6 GHz
• DSO 80304B oscilloscope from Agilent Tech. (3 GHz) for the analysis of large-signal transistor operation and the analysis of the response when excited with a UV laser pulse in the OBIC method
• impedance spectroscopy station (HP 4192A impedance analyzer, 5 Hz-13 MHz, mercury probe), which allows determining the distribution of shallow and deep energy levels, determining the surface resistance of materials and its modulation with the applied voltage, qualitative analysis of the effects related to the semiconductor surface and the formation Schottky contacts
• system for non-contact measurement of surface resistance using microwave methods
• a system for optical beam induced currents (OBIC) mapping and a system for u-PL measurements to the UV range, 2 spectrophotometers (high-resolution monochromators from Jobin-Yvon with CCD cameras),
• system for measuring I-V characteristics of device structures
• DLTS system for measurements in the temperature range from 10 to 500 K